Grant title: ANALYSIS AND DESIGN OF MEMRISTOR SYSTEMS

Team:

Chief investigator: Investigators:

Publications

Articles in journals

  1. Z. Galias. Numerical study of multiple attractors in the parallel inductor-capacitor-memristor circuit. Int. J. Bifurcation Chaos, 27(11):1730036 (16 pages), 2017.
    DOI: 10.1142/S0218127417300361
  2. Z. Galias. Study of amplitude control and dynamical behaviors of a memristive band pass filter circuit. IEEE Trans. Circuits Systems II, 65(5):637-641, May 2018.
    DOI: 10.1109/TCSII.2018.2820104

Articles in conference proceedings

  1. Z. Galias. Topological chaos in the parallel inductor-capacitor-memristor circuit. In Proc. Int. Conf. Signals Electronic Syst. (ICSES), pages 139-142, Kraków, 2016.
    DOI: 10.1109/ICSES.2016.7593838
  2. B. Garda, M. Ogorzałek, Modelling the generic TiO2 memristor with the parasitic components. In Proc. Int. Conf. Signals Electronic Syst. (ICSES), pages 173-176, Kraków, 2016.
    DOI: 10.1109/ICSES.2016.7593845
  3. B. Garda, M. Ogorzałek, K. Kasiński, and Z. Galias. Studies of dynamics of memristor-based memory cells. In Proc. IEEE 8th Latin American Symposium on Circuits & Systems (LASCAS), pages 1-4, 2017.
    DOI: 10.1109/LASCAS.2017.7948105
  4. B. Garda, K. Kasiński, M. Ogorzałek, and Z. Galias. Investigations of switching phenomena in Pt/HfO2/Ti/Pt memristive devices. In Proc. Eur. Conf. Circuit Theory Des. (ECCTD), pages 1-4, Catania, Italy, 2017.
    DOI: 10.1109/ECCTD.2017.8093222
  5. Z. Galias. Coexistence of attractors in the parallel inductor-capacitor-memristor circuit. In Proc. IEEE Int. Conference on Electronics, Circuits and Systems (ICECS), pages 66-69, Batumi, Georgia, 2017.
    DOI: 10.1109/ICECS.2017.8292122
  6. B. Garda, Z. Galias, Modeling sinusoidally driven self-directed channel memristors. Int. Conf. Signals Electronic Syst. (ICSES), pages 19-22, Kraków, Poland, 2018.
    DOI: 10.1109/ICSES.2018.8507323
  7. Z. Galias, Return map approach for simulations of electronic circuits with memristors, Int. Conf. Signals Electronic Syst. (ICSES), pages 147-150, Kraków, Poland, 2018.
    DOI: 10.1109/ICSES.2018.8507304
  8. B. Garda, Z. Galias, Modeling of Memristors Under Sinusoidal Excitations with Various Frequencies, In Proc. IEEE Int. Conference on Electronics, Circuits and Systems (ICECS), pages 545-548, Bordeaux, France, 2018.
    DOI: 10.1109/ICECS.2018.8617926

Conference/workshop presentations:

  1. Z. Galias. Topological chaos in the parallel inductor-capacitor-memristor circuit.
    Presented at Int. Conf. Signals Electronic Syst. (ICSES), Kraków, September 2016.
    Slides: http://www.zet.agh.edu.pl/ncn2016memristors/presentations/icses16mf.pdf
  2. B. Garda, M. Ogorzałek, Modelling the generic TiO2 memristor with the parasitic components.
    Presented at Int. Conf. Signals Electronic Syst. (ICSES), pages 173-176, Kraków, September 2016.
    Slides: http://www.zet.agh.edu.pl/ncn2016memristors/presentations/icses2016bgf.pdf
  3. B. Garda, M. Ogorzałek, K. Kasiński, and Z. Galias. Studies of dynamics of memristor-based memory cells.
    Presented at IEEE 8th Latin American Symposium on Circuits & Systems (LASCAS), Bariloche, Argentina, February 2017.
    Slides: http://www.zet.agh.edu.pl/ncn2016memristors/presentations/lascas2017f.pdf
  4. B. Garda, Z. Galias, K. Kasiński, and M. Ogorzałek, Dynamics of Memristor-based Memory Cells.
    Presented at Beyond CMOS: From Devices to Systems, Seiden Workshop, Haifa, Israel, June 2017.
    Abstract: http://www.zet.agh.edu.pl/ncn2016memristors/presentations/GardaGaliasDynamicsMemristorBasedMemoryCellsSeiden2017.pdf
    Poster: http://www.zet.agh.edu.pl/ncn2016memristors/presentations/GardaGaliasKasinskiOgorzalekDynamicsMemristorBasedMemoryCells.pdf
  5. B. Garda, K. Kasiński, M. Ogorzałek, and Z. Galias. Investigations of switching phenomena in Pt/HfO2/Ti/Pt memristive devices.
    Presented at European Conference on Circuit Theory and Design (ECCTD), Catania, Italy, September 2017.
    Slides: http://www.zet.agh.edu.pl/ncn2016memristors/presentations/ecctd2017bgf.pdf
  6. Z. Galias. Coexistence of attractors in the parallel inductor-capacitor-memristor circuit.
    Presented at IEEE Int. Conference on Electronics, Circuits and Systems (ICECS), Batumi, December 2017.
    Slides: http://www.zet.agh.edu.pl/ncn2016memristors/presentations/icecs17mf.pdf
  7. Z. Galias. Study of amplitude control and dynamical behaviors of a memristive band pass filter circuit.
    Presented at ISCAS, Florence, Italy, May 2018.
    Manuscript: http://www.zet.agh.edu.pl/ncn2016memristors/presentations/GaliasAmplitudeControlISCAS2018.pdf
    Slides: http://www.zet.agh.edu.pl/ncn2016memristors/presentations/GaliasAmplitudeControlISCAS2018f.pdf
  8. P. Zegarmistrz, Basic research and measurement on wolfram-based memristors.
    Presented at MemoCIS Training School, Instituto de Telecomunicacoes, Aveiro, Portugal, June 2018.
    Poster: http://www.zet.agh.edu.pl/ncn2016memristors/presentations/ZegarmistrzMemoCIS2018b.pdf
  9. Ioannis Messaris, Alexander Serb, Themis Prodromakis and Maciej Ogorzalek, A Data-Driven Noise Modelling Paradigm for Analog TiO2 Devices.
    Presented at MemoCIS Training School, Instituto de Telecomunicacoes, Aveiro, Portugal, June 2018.
    Poster: http://www.zet.agh.edu.pl/ncn2016memristors/presentations/MessarisSerbProdromakisOgorzalekMemoCIS2018.pdf
  10. B. Garda, The memristor switching behavior from the energy point of view.
    Presented at MEMRISYS 2018, Beijing, China, July 2018.
    Abstract: http://www.zet.agh.edu.pl/ncn2016memristors/presentations/GardaMemristorSwitchingMEMRISYS2018.pdf
    Poster: http://www.zet.agh.edu.pl/ncn2016memristors/presentations/GardaMemristorSwitchingMEMRISYS2018Poster.pdf
  11. I. Messaris, A. Serb, T. Prodromakis and M. Ogorzalek. A Data-Driven Noise Modelling Paradigm for Analog TiO2 Devices.
    Presented at MEMRISYS 2018, Beijing, China, July 2018.
    Abstract: http://www.zet.agh.edu.pl/presentations/ncn2016memristors/MessarisSerbProdromakisOgorzalekDataDrivenNoiseModellingMEMRISYS2018.pdf
  12. B. Garda, Z. Galias, Modeling sinusoidally driven self-directed channel memristors.
    Presented at Int. Conf. Signals Electronic Syst. (ICSES), Krakow, Poland, September 2018.
    Slides: http://www.zet.agh.edu.pl/ncn2016memristors/presentations/icses2018bgf.pdf
  13. Z. Galias, Return map approach for simulations of electronic circuits with memristors.
    Presented at Int. Conf. Signals Electronic Syst. (ICSES), Krakow, Poland, September 2018.
    Slides: http://www.zet.agh.edu.pl/ncn2016memristors/presentations/icses2018mf.pdf
  14. B. Garda, Z. Galias, Modeling of Memristors Under Sinusoidal Excitations with Various Frequencies.
    Presented at Int. Conference on Electronics, Circuits and Systems (ICECS), Bordeaux, France, December 2018.
    Slides: http://www.zet.agh.edu.pl/ncn2016memristors/presentations/icecs2018bgf.pdf
  15. Stathopoulos, A. Serb, A. Khiat, M. Ogorzałek, and T. Prodromakis, Switching noise modelling in RRAM devices.
    MEMRISYS 2019, Dresden, Germany, 2019.
    Abstract: http://www.zet.agh.edu.pl/presentations/ncn2016memristors/StathopoulosMEMRISYS2019.pdf