Grant title: ANALYSIS AND DESIGN OF MEMRISTOR SYSTEMS

• Granting agency: NCN,
• Grant type: OPUS,
• Grant no.: 2015/17/B/ST7/03763,
• Dates: 2016.01.26-2019.09.25.

Team:

• Prof. Zbigniew Galias.
  

• Prof. Maciej Ogorzałek,
• Dr. Bartłomiej Garda,
• Dr. Piotr Zegarmistrz.
  

Publications

Articles in journals

1. Z. Galias. Numerical study of multiple attractors in the parallel inductor-capacitor-memristor circuit. Int. J. Bifurcation Chaos, 27(11):1730036 (16 pages), 2017.
   DOI: 10.1142/S0218127417300361
2. Z. Galias. Study of amplitude control and dynamical behaviors of a memristive band pass filter circuit. IEEE Trans. Circuits Systems II, 65(5):637-641, May 2018.
   DOI: 10.1109/TCSII.2018.2820104
3. S. Stathopoulos, A. Serb, A. Khiat, M. Ogorzałek, T. Prodromakis, A Memristive Switching Uncertainty Model, IEEE Trans. Electron Devices, 66(7):2946-2953, July 2019.
   DOI: /10.1109/TED.2019.2918102
4. Z. Galias. Simulations of Memristors using the Poincare Map Approach, IEEE Trans. Circuits Systems I, 67(3):963-971, 2020.
   DOI: /10.1109/TCSI.2019.2949736
5. P. Zegarmistrz, Z. Galias. Study of Forming Process in Memristive Devices using Rectangular Waves, Przeglad Elektrotechniczny, 96(1):15-18, 2020.
   DOI: /10.15199/48.2020.01.04
6. P. Zegarmistrz, B. Garda. Memristive Devices In Three-Phase Systems, Przeglad Elektrotechniczny, 96(1):11-14,2020.
   DOI:/10.15199/48.2020.01.03

Articles in conference proceedings

1. Z. Galias. Topological chaos in the parallel inductor-capacitor-memristor circuit. In Proc. Int. Conf. Signals Electronic Syst. (ICSES), pages 139-142, Kraków, 2016.
   DOI: 10.1109/ICSES.2016.7593838
2. B. Garda, M. Ogorzałek, Modelling the generic TiO2 memristor with the parasitic components. In Proc. Int. Conf. Signals Electronic Syst. (ICSES), pages 173-176, Kraków, 2016.
   DOI: 10.1109/ICSES.2016.7593845
3. B. Garda, M. Ogorzałek, K. Kasiński, and Z. Galias. Studies of dynamics of memristor-based memory cells. In Proc. IEEE 8th Latin American Symposium on Circuits & Systems (LASCAS), pages 1-4, 2017.
   DOI: 10.1109/LASCAS.2017.7948105
4. B. Garda, K. Kasiński, M. Ogorzałek, and Z. Galias. Investigations of switching phenomena in Pt/HfO2/Ti/Pt memristive devices. In Proc. Eur. Conf. Circuit Theory Des. (ECCTD), pages 1-4, Catania, Italy, 2017.
   DOI: 10.1109/ECCTD.2017.8093222
5. Z. Galias. Coexistence of attractors in the parallel inductor-capacitor-memristor circuit. In Proc. IEEE Int. Conference on Electronics, Circuits and Systems (ICECS), pages 66-69, Batumi, Georgia, 2017.
   DOI: 10.1109/ICECS.2017.8292122
6. B. Garda, Z. Galias, Modeling sinusoidally driven self-directed channel memristors. Int. Conf. Signals Electronic Syst. (ICSES), pages 19-22, Kraków, Poland, 2018.
   DOI: 10.1109/ICSES.2018.8507323
7. Z. Galias, Return map approach for simulations of electronic circuits with memristors, Int. Conf. Signals Electronic Syst. (ICSES), pages 147-150, Kraków, Poland, 2018.
   DOI: 10.1109/ICSES.2018.8507304
8. B. Garda, Z. Galias, Modeling of Memristors Under Sinusoidal Excitations with Various Frequencies, In Proc. IEEE Int. Conference on Electronics, Circuits and Systems (ICECS), pages 545-548, Bordeaux, France, 2018.
   DOI: 10.1109/ICECS.2018.8617926
9. Z. Galias, Nonlinear dynamics of coupled inductor-capacitor-memristor oscillators, In Proc. IEEE Int. Conference on Electronics, Circuits and Systems (ICECS), pages 554-557, Genoa, 2019.
   DOI: 10.1109/ICECS46596.2019.8965189

Conference/workshop presentations:

1. Z. Galias. Topological chaos in the parallel inductor-capacitor-memristor circuit.
   Presented at Int. Conf. Signals Electronic Syst. (ICSES), Kraków, September 2016.
   Slides: http://www.zet.agh.edu.pl/ncn2016memristors/presentations/icses16mf.pdf
   
2. B. Garda, M. Ogorzałek, Modelling the generic TiO2 memristor with the parasitic components.
   Presented at Int. Conf. Signals Electronic Syst. (ICSES), pages 173-176, Kraków, September 2016.
   Slides: http://www.zet.agh.edu.pl/ncn2016memristors/presentations/icses2016bgf.pdf
3. B. Garda, M. Ogorzałek, K. Kasiński, and Z. Galias. Studies of dynamics of memristor-based memory cells.
   Presented at IEEE 8th Latin American Symposium on Circuits & Systems (LASCAS), Bariloche, Argentina, February 2017.
   Slides: http://www.zet.agh.edu.pl/ncn2016memristors/presentations/lascas2017f.pdf
4. B. Garda, Z. Galias, K. Kasiński, and M. Ogorzałek, Dynamics of Memristor-based Memory Cells.
   Presented at Beyond CMOS: From Devices to Systems, Seiden Workshop, Haifa, Israel, June 2017.
   Abstract: http://www.zet.agh.edu.pl/ncn2016memristors/presentations/GardaGaliasDynamicsMemristorBasedMemoryCellsSeiden2017.pdf
   Poster: http://www.zet.agh.edu.pl/ncn2016memristors/presentations/GardaGaliasKasinskiOgorzalekDynamicsMemristorBasedMemoryCells.pdf
5. B. Garda, K. Kasiński, M. Ogorzałek, and Z. Galias. Investigations of switching phenomena in Pt/HfO2/Ti/Pt memristive devices.
   Presented at European Conference on Circuit Theory and Design (ECCTD), Catania, Italy, September 2017.
   Slides: http://www.zet.agh.edu.pl/ncn2016memristors/presentations/ecctd2017bgf.pdf
6. Z. Galias. Coexistence of attractors in the parallel inductor-capacitor-memristor circuit.
   Presented at IEEE Int. Conference on Electronics, Circuits and Systems (ICECS), Batumi, December 2017.
   Slides: http://www.zet.agh.edu.pl/ncn2016memristors/presentations/icecs17mf.pdf
7. Z. Galias. Study of amplitude control and dynamical behaviors of a memristive band pass filter circuit.
   Presented at ISCAS, Florence, Italy, May 2018.
   Manuscript: http://www.zet.agh.edu.pl/ncn2016memristors/presentations/GaliasAmplitudeControlISCAS2018.pdf
   Slides: http://www.zet.agh.edu.pl/ncn2016memristors/presentations/GaliasAmplitudeControlISCAS2018f.pdf
   
8. P. Zegarmistrz, Basic research and measurement on wolfram-based memristors.
   Presented at MemoCIS Training School, Instituto de Telecomunicacoes, Aveiro, Portugal, June 2018.
   Poster: http://www.zet.agh.edu.pl/ncn2016memristors/presentations/ZegarmistrzMemoCIS2018b.pdf
   
9. Ioannis Messaris, Alexander Serb, Themis Prodromakis and Maciej Ogorzalek, A Data-Driven Noise Modelling Paradigm for Analog TiO2 Devices.
   Presented at MemoCIS Training School, Instituto de Telecomunicacoes, Aveiro, Portugal, June 2018.
   Poster: http://www.zet.agh.edu.pl/ncn2016memristors/presentations/MessarisSerbProdromakisOgorzalekMemoCIS2018.pdf
   
10. B. Garda, The memristor switching behavior from the energy point of view.
    Presented at MEMRISYS 2018, Beijing, China, July 2018.
    Abstract: http://www.zet.agh.edu.pl/ncn2016memristors/presentations/GardaMemristorSwitchingMEMRISYS2018.pdf
    Poster: http://www.zet.agh.edu.pl/ncn2016memristors/presentations/GardaMemristorSwitchingMEMRISYS2018Poster.pdf
    
11. I. Messaris, A. Serb, T. Prodromakis and M. Ogorzalek. A Data-Driven Noise Modelling Paradigm for Analog TiO2 Devices.
    Presented at MEMRISYS 2018, Beijing, China, July 2018.
    Abstract: http://www.zet.agh.edu.pl/presentations/ncn2016memristors/MessarisSerbProdromakisOgorzalekDataDrivenNoiseModellingMEMRISYS2018.pdf
    
12. B. Garda, Z. Galias, Modeling sinusoidally driven self-directed channel memristors.
    Presented at Int. Conf. Signals Electronic Syst. (ICSES), Krakow, Poland, September 2018.
    Slides: http://www.zet.agh.edu.pl/ncn2016memristors/presentations/icses2018bgf.pdf
13. Z. Galias, Return map approach for simulations of electronic circuits with memristors.
    Presented at Int. Conf. Signals Electronic Syst. (ICSES), Krakow, Poland, September 2018.
    Slides: http://www.zet.agh.edu.pl/ncn2016memristors/presentations/icses2018mf.pdf
14. B. Garda, Z. Galias, Modeling of Memristors Under Sinusoidal Excitations with Various Frequencies.
    Presented at IEEE Int. Conference on Electronics, Circuits and Systems (ICECS), Bordeaux, France, December 2018.
    Slides: http://www.zet.agh.edu.pl/ncn2016memristors/presentations/icecs2018bgf.pdf
15. Stathopoulos, A. Serb, A. Khiat, M. Ogorzałek, and T. Prodromakis, Switching noise modelling in RRAM devices.
    MEMRISYS 2019, Dresden, Germany, 2019.
    Abstract: http://www.zet.agh.edu.pl/ncn2016memristors/presentations/StathopoulosMEMRISYS2019.pdf
    
16. P. Zegarmistrz, B. Garda, Memristive Devices In Three-Phase Systems.
    Presented at Progress in Applied Electrical Engineering (PAEE), Koscielisko, Poland, June 2019.
    Slides: http://www.zet.agh.edu.pl/ncn2016memristors/presentations/ZegarmistrzGardaPresentationPAEE2019.pdf
    
17. P. Zegarmistrz, Z. Galias, Study of Forming Process in Memristive Devices using Rectangular Waves.
    Presented at Progress in Applied Electrical Engineering (PAEE), Koscielisko, Poland, June 2019.
    Slides: http://www.zet.agh.edu.pl/ncn2016memristors/presentations/ZegarmistrzGaliasPresentationPAEE2019.pdf
    
18. Z. Galias, Nonlinear dynamics of coupled inductor-capacitor-memristor oscillators.
    Presented at IEEE Int. Conference on Electronics, Circuits and Systems (ICECS), 2019.
    Poster: http://www.zet.agh.edu.pl/ncn2016memristors/presentations/GaliasICECS2019.pdf
    

MATLAB code:

• Simulations of the series connection of a linear resistor and a VTEAM memristor (Z. Galias, "Simulations of Memristors using the Poincare Map Approach"):
  • The function defining parameters for the memristor based oscillator: vteamparam.m,
  • The function defining the RHS of the series connection of a linear resistor and a VTEAM memristor for the standard approach: vteamRHS.m,
  • The function defining the RHS of the series connection of a linear resistor and a VTEAM memristor for the Poincare map approach: vteamRHSRegions.m,
  • The function defining exit conditions for series connection of a linear resistor and a VTEAM memristor for the Poincare map approach: vteamEvents.m,
  • The function computing trajectories for the memristor based oscillator for the Poincare map approach: vteamIntegrate.m,
  • Example simulations: vteamSimulate.m.
• Simulations of a memristor based oscillator (Z. Galias, "Simulations of Memristors using the Poincare Map Approach"):
  • The function defining parameters for the memristor based oscillator: memoscparam.m,
  • The function defining the RHS of the memristor based oscillator with the BC memristors model for the standard approach: memoscRHS.m,
  • The function defining the RHS of the memristor based oscillator for the Poincare map approach: memoscRHSRegions.m,
  • The function defining exit conditions for the memristor based oscillator for the Poincare map approach: memoscEvents.m,
  • The function computing trajectories for the memristor based oscillator for the Poincare map approach: memoscIntegrate.m,
  • Example simulations: memoscSimulate.m.
• Simulations of coupled inductor-capacitor-memristor oscillators (Z. Galias, "Nonlinear dynamics of coupled inductor-capacitor-memristor oscillators"):
  • The function defining the RHS of the ring of inductor-capacitor-memristor oscillator mlcnRHS.m
  • Example computations involving two coupled inductor-capacitor-memristor oscillators: mlcSimulate2.m.
  • Results:
    • mlcn2x0y0a.eps,
    • mlcn2x0y0b.eps,
    • mlcn2y0y1a.eps,
    • mlcn2y0y1b.eps.
  • Example computations involving three coupled inductor-capacitor-memristor oscillators: mlcSimulate3.m.
  • Results:
    • mlcn3tx1x2.eps.
  • Example computations involving six coupled inductor-capacitor-memristor oscillators: mlcSimulate6.m.
  • Results:
    • mlcn6ax0y0.eps,
    • mlcn6ax0y1.eps,
    • mlcn6ax0y2.eps,
    • mlcn6ax0y3.eps,
    • mlcn6ax0y4.eps,
    • mlcn6ax0y5.eps.
  • Example computations involving three coupled inductor-capacitor-memristor oscillators: mlcSimulate3b.m.
  • Results:
    • mlc118n3ex0y0.eps,
    • mlc118n3ey0y1.eps,
    • mlc118n3ey1y2.eps,
    • mlc118n3ey2y0.eps,
    • mlc118n3fx0y0.eps,
    • mlc118n3fx0y0.eps,
    • mlc118n3fy0y1.eps,
    • mlc118n3fy1y2.eps,
    • mlc118n3fy2y0.eps.
  • The function defining the RHS of the inductor-capacitor-memristor oscillator and its variational equation: mlcVERHS.m,
  • The function defining the RHS of the inductor-capacitor-memristor oscillator and the generic variational equation: mlcGenVERHS.m,
  • Compute Lyapunov exponents of the inductor-capacitor-memristor oscillator: mlcle.m,
  • Compute Lyapunov exponents of the generic variational equation of the inductor-capacitor-memristor oscillator: mlclegen.m,
  • Example computations: mlcSimulate.m.
  • Results:
    • mlc118legen1.res,
    • mlc118legen1a.res,
    • mlc118legen2.res,
    • mlc118legen2a.res,
    • mlc118legen3.res,
    • mlc118legen3a.res,
    • mlc118legen4.res.

C++ code:

• Analysis of the parallel inductor-capacitor-memristor circuit (Z. Galias. Numerical study of multiple attractors in the parallel inductor-capacitor-memristor circuit):
  • Main file: mem.cpp,
  • Auxiliary files:
    • eps.cc,
    • eps.h,
    • misc.cc,
    • misc.h,
    • makefile.
• Analysis of a memristive band pass filter circuit (Z. Galias. Study of amplitude control and dynamical behaviors of a memristive band pass filter circuit).
  • Main file: membpf.cpp,
  • Auxiliary files:
    • eps.cc,
    • eps.h,
    • misc.cc,
    • misc.h,
    • makefile.